Published March 1999
by Materials Research Society .
Written in English
|Contributions||Seshu B. Desu (Editor), David B. Beach (Editor), B. W. Wessels (Editor), S. Gokoglu (Editor)|
|The Physical Object|
|Number of Pages||366|
Chemical vapor deposition (CVD) is a process in which films of materials are deposited from the vapor phase by the decomposition of chemicals on the surface of a substrate (Fig. 1).Most frequently the process is thermally driven but photo- and plasma-assisted methods are also used. The deposition of the film is controlled by a chemical reaction. Get this from a library! Metal-organic chemical vapor deposition of electronic ceramics: symposium held on November December 3, , at Boston, Massachusetts, U.S.A.. [Seshu B Desu; Materials Research Society. Fall Meeting;]. Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE. Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.
Metal-organic chemical vapor deposition of electronic ceramics II. Pittsburgh, Pa.: Materials Research Society, © (OCoLC) Material Type: Conference publication, Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors: Seshu B Desu; David B . F.H. Yang, in Nitride Semiconductor Light-Emitting Diodes (LEDs), Abstract: Modern metal-organic chemical vapor deposition (MOCVD) systems have evolved to meet the demands for GaN-based light-emitting diodes (LEDs) and electronic devices. Growth mechanisms in MOCVD will be reviewed. Requirements for throughput, uniformity and reproducibility in modern MOCVD system will be discussed. Superconducting thin films of Tl 2 Ba 2 Ca 2 Cu 3 O X (TL) have been grown on single crystal () LaAlO 3 using a two-step process. Ba 2 Ca 2 Cu 3 O X precursor films are deposited via metal-organic chemical vapor deposition (MOCVD) in a horizontal hot walled reactor. The second generation precursors Ba(hfa) 2 tet, Ca(hfa) 2 tet, and Ca(hfa) 2 (hfa = hexafluoroacetylacetonate, tet Cited by: 1. increase deposition rates and/or lower deposition temperatures. There are also many derivatives of the CVD terminology, such as metal-organic chemical vapor deposition (MOCVD) 16,17 or, less commonly, organo-metallic chemical vapor deposition (OMCVD), which are sometimes used to note the class of molecules used in the deposition process.
Metal‐organic chemical vapor deposition of electronic ceramics II. Herausgegeben von Seshu B. Desu, David B. Beach, Peter C. van Buskirk. Eine Publikation der Materials Research Society, Pittsburgh, Pennsylvania, , Volume , Seiten, $ (MRS Members), $ (U. S. List), $ (Non‐U.S.‐List), ISBN 1‐‐‐5Author: U. Beck. The MOCVD technique enables very thin layers of atoms to be deposited on a semiconductor wafer and is a key process for manufacturing III-V compound semiconductors, especially gallium nitride (GaN)-based semiconductors.. Other names for the MOCVD process include: organo-metallic chemical vapor deposition (OMCVD), organo-metallic vapor phase epitaxy (OMVPE) and . MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides. Metal organic chemical vapor deposition of ZrO2 thin films using the single precursor zirconium 3-methylpentoxide, Zr(mp)4. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue. 4, p. Cited by: